摘 要:针对现有栅极驱动芯片M57962L体积大、环境适应性差的问题,经过深入调研,选用1ED020I12-FA栅极驱动芯片代替M57962L。设计基于该芯片的新型功率驱动电路,并对其栅极驱动性能、过流保护、故障恢复、功率消耗等性能进行了试验研究。试验结果表明基于1ED020I12-FA的新型驱动电路具有开关速度快、体积小、功耗低、温度范围宽的优点,可以替代现有驱动电路。 关键词:IGBT;栅极驱动电路;伺服驱动器
Abstract: Considered with the problem of big capacity and bad environmental adaptation of gate driver M57962, the diver has to be replaced by 1ED020I12-FA of Infinoen Corporation in this paper. A new gate driving circuit based on 1ED020I12-FA was designed. Some experiments, such as the gate driving performance, over-current protection, failure recovery, power consumption, were done. The experiments results indicate that the gate driver circuit with 1ED020I12-FA has more advantages for faster switching speed, lower capacity and power consumption, and lager range of working temperature and can replace the existing circuit. Key words: IGBT;gate drive circuit;servo driver
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