摘  要：为提高电动汽车双向功率变换器的工作效率和使用寿命，提出双IGBT缓冲吸收电路。针对双RCD型缓冲吸收电路，详述了IGBT关断过程C-E端过电压产生的原因，给出了电路缓冲电容和电阻的确定方法，讨论了不同门极驱动电阻下电路的缓冲吸收效果，通过计算和实验调整确定了电路相关元件参数，指出了IGBT温升设计及其安装的注意事项。实验研究结果表明，双RCD型缓冲吸收电路可显著降低IGBT关断过电压，具有良好的缓冲吸收效果，可保证其安全性、可靠性和稳定性。
关键词：双IGBT；缓冲吸收；无感电容；温升

Abstract: To improve the efficiency and life cycle of the bi-directional power converter for electric vehicle,the snubbed circuit for double IGBT was provided.Aiming at the double RCD snubbed circuit,the reason for the overload voltage between the C-E of IGBT were depicted.The defining method for the value of the capacitance and resistance of the circuit were presented.The effect of the snubbed circuit under different gate resistance was analyzed.The corresponding coefficients of the snubbed circuit were defined by the calculation and experiments,is given out the attention for designing the thermal parameters of the circuit.The results shows that the double RCD snubbed circuit can decrease the overload voltage of IGBT obviously.It can work well for a long time under different situations,and its reliability,safety and stability are validated.
Key Words: Double IGBT;Snubbed circuit;Non-inductive capacitor;Thermal